This study is an attempt to investigate the effect of distributed Bragg reflectors (DBRs) doping concentration on the GaN-based vertical cavity surface emitting lasers (VCSEL) using Integrated System Engineering Technical Computer Aided Design (ISE TCAD) software. Uniformly n (Up) and p (Down) doping concentration, changed ranging 5e+17 to 1e+19 cm-3. The observation revealed that as DBR doping concentrations rose, the output power increased and the threshold current reduced. These are attributed to the increase in radiative recombination and decrease in the optical losses which has induced the scattering process.

Effect of the Changing DBR Doping.pdf

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